The highly versatile platinum precursor 78-1350 is available from the J&K Scientific catalog. This low-melting (30-31°C) off-white solid exhibits high volatility (sublimes at 23°C/0.053mm) and is frequently utilized in CVD (Chemical Vapor Deposition) and ALD (Atomic Layer Deposition) applications. Its composition, limited to C, H, and Pt, along with moderate decomposition temperatures, make it a superior choice for these processes.
Advantages of Using Low-Temperature Platinum Precursors for Thin Film Deposition
A stable, low-temperature platinum precursor that avoids contaminating atoms from ligands is advantageous for deposition. Platinum thin films are essential in microelectronic device processing and electroless metal plating due to their high purity and desirable properties.
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High Purity Platinum Films: Films with high purity (>99 atom %) and excellent crystal quality can be achieved at 180°C using cyclopentadienyltrimethylplatinum (78-1300).
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Control Over Vaporization: The need for a liquid precursor to improve control during platinum vapor deposition has driven the adoption of 78-1350—an oily substance at room temperature—ideal for thin film manufacturing. Ultra-thin platinum films on oxide substrates have significant applications in microelectronics and nanotechnology, attributed to platinum’s exceptional electronic properties, catalytic activity, and chemical stability. Atomic Layer Deposition (ALD) enables precise and uniform deposition of these thin platinum films.
78-1350 (Trimethyl)methylcyclopentadienylplatinum(IV), 99%
Applications of Ultra-Thin Platinum Films Using 78-1350
Using 78-1350 as a platinum precursor, nanostructured metal films with nanoscale thickness and high aspect ratios can be achieved. Such nanostructured films are vital for applications in sensing, catalysis, and energy storage.
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Electrochemical Sensing: Nanostructured Pt films are applied in electrochemical sensing, such as non-enzymatic glucose detection. 78-1350 is also recognized for its efficiency as an organometallic photo-initiator in hydrosilylation.
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Plasma-Assisted ALD: Plasma-assisted ALD processes utilizing 78-1350 allow platinum film deposition at room temperature. These processes yield high-quality, nearly pure films with a resistivity of 18-24 μΩ cm, achieved through steps involving 78-1350 dosing, O₂ plasma exposure, and H₂ gas.
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Catalytic Activity for Fuel Cells: ALD platinum on multi-layered carbon nanotubes enhances catalytic activity and durability, making the ALD-Pt catalyst electrode highly effective in proton exchange membrane fuel cells.
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Purification with Electron-Beam Assistance: Platinum films deposited with 78-1350 can undergo electron-beam assisted purification using H₂O vapor at room temperature, which ensures rapid and effective purification.
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Model for Noble Metal ALD: ALD with 78-1350 and O₂ gas has become a model system for studying noble metal ALD processes.
Related Products
| Product | Product Number | CAS |
| (Trimethyl)methylcyclopentadienylplatinum(IV), 99% | 94442-22-5 | 78-1350 |
| (Trimethyl)cyclopentadienylplatinum(IV), 99% | 1271-07-4 | 78-1300 |
| (Trimethyl)pentamethylcyclopentadienylplatinum(IV), 99% | 78-1358 | 97262-98-1 |
| Platinum(II) hexafluoroacetylacetonate, 98% (99.9%-Pt) | 65353-51-7 | 78-1550 |
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- Chem. Mater., 2013, 25, 1769.
- Electrochim. Acta., 2012, 75, 101.
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- Chem. Mater., 2012, 24, 1752.
Vicky Zhao
