Tetraethoxysilane (CAS No. 78-10-4), also commonly known as Tetraethyl orthosilicate (TEOS), is an important silicon alkoxide and widely used silica precursor, sol-gel reagent, and silicon source.
Its molecular structure contains four ethoxy groups bonded to silicon. Tetraethoxysilane readily undergoes hydrolysis and condensation reactions, making it particularly useful for preparing silica, siloxane networks, porous materials, coatings, nanoparticles, and silicon-containing thin films.
Because of its controllable sol-gel chemistry and high silicon content, Tetraethoxysilane is widely used in materials science, nanotechnology, semiconductor processing, surface engineering, and inorganic synthesis.
Tetraethoxysilane reacts with water under suitable acidic or basic conditions to form silanol groups:
Si(OC₂H₅)₄ + H₂O → Si–OH + C₂H₅OH
The degree and rate of hydrolysis depend on factors such as:
The generated silanol groups undergo condensation to form Si–O–Si bonds:
Si–OH + HO–Si → Si–O–Si + H₂O
or:
Si–OH + Si–OR → Si–O–Si + ROH
Continuous hydrolysis and condensation ultimately generate a three-dimensional siloxane/silica network.
This reaction mechanism is the basis for many sol-gel synthesis and silica-material fabrication processes.
Tetraethoxysilane is one of the most commonly used precursors for sol-gel processing.
Applications include:
Tetraethoxysilane is widely used as a silicon precursor for preparing silica nanoparticles.
Applications include:
High-purity Tetraethoxysilane can serve as a precursor for silicon oxide deposition and other silicon-containing materials.
Applications include:
TEOS-based deposition processes are used to produce silicon oxide films in semiconductor and microelectronics applications.
Tetraethoxysilane can form silica-based networks on various substrates.
Applications include:
Tetraethoxysilane can be combined with organic precursors to prepare hybrid materials.
Applications include:
By controlling hydrolysis and condensation conditions, Tetraethoxysilane can be used to prepare silica materials with tailored porosity.
Applications include:
Tetraethoxysilane can provide a silica-based platform for subsequent surface functionalization.
Applications include:
Tetraethoxysilane can undergo hydrolysis in the presence of water. TCI recommends storing the material under inert gas in a cool and dark location. (tcichemicals.com)
Tetraethoxysilane (CAS No. 78-10-4) is widely used in:
A: Tetraethoxysilane is a silicon alkoxide with CAS No. 78-10-4, molecular formula C₈H₂₀O₄Si, and molecular weight 208.33 g/mol.
A: Yes. Tetraethoxysilane and Tetraethyl orthosilicate (TEOS) are names for the same compound, CAS 78-10-4.
A: It is primarily used as a silicon and silica precursor for sol-gel synthesis, silica nanoparticles, porous silica, coatings, thin films, and semiconductor materials.
A: The molecular formula is C₈H₂₀O₄Si.
A: The molecular weight is 208.33 g/mol.
A: Yes. Tetraethoxysilane is one of the most widely used silicon precursors for preparing silica nanoparticles and mesoporous silica.
A: Yes. High-purity Tetraethoxysilane can be used as a silicon precursor for silicon oxide thin films and dielectric materials in semiconductor processing.
A: Tetraethoxysilane undergoes hydrolysis in the presence of water, so exposure to moisture should be minimized during storage and handling.
A: Tetraethoxysilane contains four ethoxy groups, while Tetramethoxysilane contains four methoxy groups. Both are silicon alkoxide precursors, but their hydrolysis and condensation behavior can differ.
