Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2% Zr) TDMAH, PURATREM|72-8000|19782-68-4

Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2% Zr) TDMAH, PURATREM

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Sku SC72-8000_5_G
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Product Information

Product Name
Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2% Zr) TDMAH, PURATREM
Brand Name
US-Strem
Product Number
72-8000
CAS
19782-68-4
Certificate of Analysis (COA)​
COA not found

General Information

PubChem CID
140609
IUPAC Name
tetrakis(dimethylazanide);hafnium(4+)
InChI Key
ZYLGGWPMIDHSEZ-UHFFFAOYSA-N
SMILES
CN-C.CN-C.CN-C.CN-C.Hf+4

Safety Information

Storage Condition
Store at 2-8℃

Application

Technical Notes: 1.ALD/CVD precursor for Hf thin film deposition.
References:
1. Chem. Mater. 2002. 14, 4350.
2.J. Am. Chem. Soc. 2006, 128, 3518.
3.Appl. Phys. L ett. 2007, 90, 182907.
4.Chem. Mater. 2004, 16.3497 .
5.Chem. Mater._ 2001 A 13. 2463.
6.Appl.Surf._ Sci.. 2014. 321, 214.
7.Adv. Mater. Interfaces 2020, Z, 2001493.

References

Improved Ferroelectric Effects and Gate Controllability in Hf0.5Zr0.5O2-Gated InAlGaN/GaN MIS-HEMTs Using ZrO2 Seed Layers
Publication Name: Journal of Electronic Materials
Publication Date: 2024-11-27
DOI: 10.1007/s11664-024-11600-0

Effect of the Water Pulse Duration on the Stoichiometry of HfOx Films Obtained from Tetrakis(Dimethylamino)Hafnium
Publication Name: Journal of Structural Chemistry
Publication Date: 2024-10
DOI: 10.1134/s0022476624100184

Structure and Properties of Vertically Oriented Carbon Nanotubes Grown on the Hafnium Oxide Surface
Publication Name: Optoelectronics, Instrumentation and Data Processing
Publication Date: 2024-08
DOI: 10.3103/s8756699024700559

Effect of High-Temperature Annealing in Oxygen on the Properties of Hafnium Oxide Films Grown by Atomic Layer Deposition
Publication Name: Inorganic Materials
Publication Date: 2024-05
DOI: 10.1134/s0020168524700821

Forming-Free and Non-linear Resistive Switching in Bilayer $$hbox {HfO}_{textrm{x}}$$ HfO x /$$hbox {TaO}_{textrm{x}}$$ TaO x Memory Devices by Interface-Induced Internal Resistance
Publication Name: Electronic Materials Letters
Publication Date: 2024-02-06
DOI: 10.1007/s13391-023-00481-w