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Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2% Zr) TDMAH, PURATREM|72-8000|19782-68-4

Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2% Zr) TDMAH, PURATREM

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Sku SC72-8000_5_G
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Product Information

Product Name
Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2% Zr) TDMAH, PURATREM
Brand Name
US-Strem
Product Number
72-8000
CAS
19782-68-4
Certificate of Analysis (COA)​
COA not found

General Information

PubChem CID
140609
IUPAC Name
tetrakis(dimethylazanide);hafnium(4+)
InChI Key
ZYLGGWPMIDHSEZ-UHFFFAOYSA-N
SMILES
CN-C.CN-C.CN-C.CN-C.Hf+4

Safety Information

Storage Condition
Store at 2-8℃

Description

Technical Notes: 1.ALD/CVD precursor for Hf thin film deposition.
References:
1. Chem. Mater. 2002. 14, 4350.
2.J. Am. Chem. Soc. 2006, 128, 3518.
3.Appl. Phys. L ett. 2007, 90, 182907.
4.Chem. Mater. 2004, 16.3497 .
5.Chem. Mater._ 2001 A 13. 2463.
6.Appl.Surf._ Sci.. 2014. 321, 214.
7.Adv. Mater. Interfaces 2020, Z, 2001493.

References Data Source From Pubchem

Wafer-Level Self-Assembly and Interface Passivation Patterning Technology for Nanomaterial-Compatible 3D MEMS Sensing Chips
Publication Name: Nano-Micro Letters
Publication Date: 2026-01-26
DOI: 10.1007/s40820-026-02080-4

Elucidating and decoupling diverse fatigue mechanisms toward static self-recovery in ZrO2-based antiferroelectrics
Publication Name: Communications Materials
Publication Date: 2025-11-20
DOI: 10.1038/s43246-025-01012-w

A spiking artificial neuron based on one diffusive memristor, one transistor and one resistor
Publication Name: Nature Electronics
Publication Date: 2025-10-27
DOI: 10.1038/s41928-025-01488-x

Improved Ferroelectric Effects and Gate Controllability in Hf0.5Zr0.5O2-Gated InAlGaN/GaN MIS-HEMTs Using ZrO2 Seed Layers
Publication Name: Journal of Electronic Materials
Publication Date: 2024-11-27
DOI: 10.1007/s11664-024-11600-0

Effect of the Water Pulse Duration on the Stoichiometry of HfOx Films Obtained from Tetrakis(Dimethylamino)Hafnium
Publication Name: Journal of Structural Chemistry
Publication Date: 2024-10
DOI: 10.1134/s0022476624100184