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Product Information

Product Name
Tris(dimethylamino)arsine, 99%
Brand Name
US-Strem
Product Number
33-5000
CAS
6596-96-9
Certificate of Analysis (COA)​
COA not found

General Information

PubChem CID
165514
IUPAC Name
N-bis(dimethylamino)arsanyl-N-methylmethanamine
InChI Key
QSLGKGJRFUIAEG-UHFFFAOYSA-N
SMILES
CN(C)As(N(C)C)N(C)C

Application

Technical Notes:
1.Precursor for arsenic doping in MOCVD of HgCdTe films. Absence of As- -H bonds prevents the formation of As-H complexes and its incorporation in the As-doped films
2.ALD/CVD dopant for CdTe/CdS thin films for photovoltaics grown by MOCVD
3.ALD/CVD dopant for GaAs(1-ẞ)Nẞfilms deposited by N-AL D techniquel4[5
5.CVD precursor for GaAs thin films de position from As(NMe2)3 and GaMe3 for solar cells]
References:
1.J. Electron. Mater.. 1996, 25, 1328.
2. J. Cryst. Growth, 1998, 195, 718.
3.Semicond. Sci. Technol. 2008, 23, 01501 7. 4.J. Cryst. Growth, 2009, 31 1.2821
5.J. Electron. Mater., 2014, 43, 2895.
6.RSC Adv..2015, 5, 11812.

References

Pnictide-based colloidal quantum dots for infrared sensing applications

Publication Name: Nano Convergence
Publication Date: 2025-05-29
DOI: 10.1186/s40580-025-00489-y

Heavy-Metal-Free Heterostructured Nanocrystals for Light-Emitting Applications

Publication Name: Korean Journal of Chemical Engineering
Publication Date: 2024-10-17
DOI: 10.1007/s11814-024-00305-z

Experimental Determination of the Dependence Between Spectral Response and Current–Voltage Characteristics for MWIR HgCdTe Detectors

Publication Name: Journal of Electronic Materials
Publication Date: 2023-08-26
DOI: 10.1007/s11664-023-10654-w

Chemically and electronically active metal ions on InAs quantum dots for infrared detectors

Publication Name: NPG Asia Materials
Publication Date: 2023-05-12
DOI: 10.1038/s41427-023-00477-w

II-VI Wide-Bandgap Semiconductor Device Technology: Deposition, Doping, and Etchig

Publication Name: Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors
Publication Date: 2023
DOI: 10.1007/978-3-031-19531-0_16