Bis(diethylamino)silane, 99% (99.999%-Si) BDEAS PURATREM|98-8810|27804-64-4

Bis(diethylamino)silane, 99% (99.999%-Si) BDEAS PURATREM

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Sku SC98-8810_5_G
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Product Information

Product Name
Bis(diethylamino)silane, 99% (99.999%-Si) BDEAS PURATREM
Brand Name
US-Strem
Product Number
98-8810
CAS
27804-64-4
Certificate of Analysis (COA)​
COA not found

General Information

PubChem CID
14908161
InChI Key
MVYGKQJKGZHAAI-UHFFFAOYSA-N
SMILES
CCN(CC)SiN(CC)CC

Application

Technical Notes:
1.AL D/CVD precursor for Si thin films
References:
1.J. Electrochem. Soc. 2008, 155, G163
2.ECS Transactions, 2011, 35, 191
3.J. Electrochem. Soc 2012. 159, H277
4.Chem. Vap. Deposition 2013 19, 125
5.IEEE Electron Device L ett. 2010, 31, 857
6.J. Vac. Sci. Technol. A, 2015, 33, 01A137
7.C hem. Mater. 2017.29, 4920
8.Plasma Process Polym. 2019, 16, 1 900032
9.Nanotechnology.2021 32. 075706
10.J. Vac. Sci. Technol. A. 2016, 34, 01A136

References

Preparation and Applications of Silicon and Silica Hybrid Materials
Publication Name: Engineering Materials
Publication Date: 2024
DOI: 10.1007/978-981-97-9022-7_9

Silicon stabilized alumina thin films as gas permeation barriers prepared by spatial atomic layer deposition
Publication Name: MRS Advances
Publication Date: 2017-01-30
DOI: 10.1557/adv.2017.117

Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
Publication Name: Journal of Materials Science
Publication Date: 2016-02-22
DOI: 10.1007/s10853-016-9811-0

Fabrication and properties of silicon-nitride films deposited by using PECVD with a tris(dimethylamino)silane of aminosilane precursor
Publication Name: Journal of the Korean Physical Society
Publication Date: 2015-12
DOI: 10.3938/jkps.67.2115

Self-assembling and self-limiting monolayer deposition
Publication Name: The European Physical Journal D
Publication Date: 2014-02-04
DOI: 10.1140/epjd/e2013-40420-y