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Sku 98-1955-200G
STREM
| Technical Notes: 1.ALD/CVD precursor for aluminum oxide films using H20 vapor as a precursor for the thermal [2-9], O3 for low temperature[10-17] and O2 plasma [18-22] for the plasma-enhanced processes 2.ALD/CVD precursor for the deposition of metal aluminate thin films [23-29] 3.ALD/CVD precursor for various other aluminum containing thin films (see table) References: 1.J. Phys. Chem. 1963, 67 677 2.J. Vac. Sci. Technol. A, 2018 36, 050602 3.Thin Solid Films 2000 368. 1 4.J. Appl. phys. 2005. 97 121301. 5.Crit. Rev. Solid State Mater. Sci.2013, 38203 6.Phys. Chem. chem. Phys. 2015. 17. 17322 7.J. Clean. Prod. 2016, 133 338 8. Surf. Sci. Spectra 2019, 26, 026001 |
