Bis(methylcyclopentadienyl)(methyl)(methoxy)zirconium(IV), 98+%

$97.00
Technical Notes:1. Precursor for the atomic layer deposition of zirconium oxide using water or ozone as co -reactants.1-6References:1.J. Electrochem. Soc. 2010, 157 (10), G202-G210.2.Thin Solid Films, 2010, 519 (2), 666-673.3....

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Sku: 40-1028-500MG
STREM
Technical Notes:
1. Precursor for the atomic layer deposition of zirconium oxide using water or ozone as co -reactants.1-6
References:
1.J. Electrochem. Soc. 2010, 157 (10), G202-G210.
2.Thin Solid Films, 2010, 519 (2), 666-673.
3. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing,
Measurement, and Phenomena, 2009, 27, 389.
4.Chem. Mater., 2008, 20 (17), 5698-5705
5.Chemical vapor deposition, 2008, 14, 358-365
6. Journal of Materials Chemistry, 2008, 28, 3385-3390.