Tris(dimethylamino)arsine, 99%

$226.00
Technical Notes:1.Precursor for arsenic doping in MOCVD of HgCdTe films. Absence of As- -H bonds prevents the formation of As-H complexes and its incorporation in the As-doped films 2.ALD/CVD dopant...

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Sku: 33-5000-5G
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STREM
Technical Notes:
1.Precursor for arsenic doping in MOCVD of HgCdTe films. Absence of As- -H bonds prevents the formation of As-H complexes and its incorporation in the As-doped films
2.ALD/CVD dopant for CdTe/CdS thin films for photovoltaics grown by MOCVD
3.ALD/CVD dopant for GaAs(1-ẞ)Nẞfilms deposited by N-AL D techniquel4]
4.AL D/CVD precursor for p -type epitaxial growth of CdTe on p-type GaAs films[5
5.CVD precursor for GaAs thin films de position from As(NMe2)3 and GaMe3 for solar cells]
References:
1.J. Electron. Mater.. 1996, 25, 1328.
2. J. Cryst. Growth, 1998, 195, 718.
3.Semicond. Sci. Technol. 2008, 23, 01501 7.
4.J. Cryst. Growth, 2009, 31 1.2821
5.J. Electron. Mater., 2014, 43, 2895.
6.RSC Adv..2015, 5, 11812.